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2SD1747A ISL41387 LN265RPH MC10E457 0TA17 1029B XB0932P 1N4700D
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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUX10
DESCRIPTION *With TO-3 package *High current capability *Fast switching speed APPLICATIONS *Motor control *Linear and switching industrial equipment
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 160 125 7 25 30 5 150 200 -65~200 UNIT V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A; IB=0 IE=50mA; IC=0 IC=10 A;IB=1 A IC=20 A;IB=2 A IC=20 A;IB=2 A VCE=160V;VBE=-1.5V TC=125 VCE=100V;IB=0 VEB=5V; IC=0 IC=10A ; VCE=2V IC=20A ; VCE=4V IC=1A ; VCE=15V; f=10MHz 20 10 8.0 MIN 125 7 TYP. SYMBOL VCEO(SUS) VEBO VCEsat-1 VCEsat-2 VBEsat ICEX ICEO IEBO hFE-1 hFE-2 fT
BUX10
MAX
UNIT V V
0.6 1.2 2.0 1.5 6.0 1.5 1.0 60
V V V mA mA mA
MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=20A ;IB1=-IB2=2A VCC=30V 0.5 0.6 0.15 1.5 1.2 0.3 s s s
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUX10
Fig.2 Outline dimensions
3


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